2015. 6. 09 1/4 semiconductor technical data MJE13005DC triple diffused npn transistor revision no : 1 high voltage high speed power switch application. h built-in free wheeling diode makes efficient anti saturation operation. h suitable for half bridge light ballast applications. h low base drive requirement. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) *pulse test : pulse width = 5ms, duty cycles ? 10% characteristic symbol rating unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 10 v collector current dc i c 5 a pulse i cp 10 base current i b 2 a collector power dissipation (tc=25 ? ) p c 75 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 - - 10 a dc current gain h fe (1) v ce =5v, i c =1a 23 - 35 h fe (2) v ce =5v, i c =2a 8 - - collector-emitter saturation voltage v ce(sat) i c =1a, i b =0.2a - - 0.5 v i c =2a, i b =0.5a - - 0.6 i c =4a, i b =1a - - 1 base-emitter saturation voltage v be(sat) i c =1a, i b =0.2a - - 1.2 v i c =2a, i b =0.5a - - 1.6 collector output capacitance c ob v cb =10v, f=1mhz - 65 - pf transition frequency f t v ce =10v, i c =0.5a 4 - - mhz turn-on time t on - - 0.15 s storage time t stg 2 - 5 s fall time t f - - 0.8 s diode forward voltage v f i f =2a - - 1.6 v *reverse recovery tims (di/dt=10a/ s) t rr i f =0.4a - 800 - ns i f =1a - 1.4 - s i f =2a - 1.9 - s
2015. 6. 09 2/4 MJE13005DC revision no : 1
2015. 6. 09 3/4 MJE13005DC revision no : 1
2015. 6. 09 4/4 MJE13005DC revision no : 1 reverse biased safe operating area test circuits for inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the ba se to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltage-current conditions during reverse biased turn-off. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 11 gives the complete rbsoa characteristics.
|
